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CeO2 doped zinc oxide varistor voltage gradient pressure sensitive valve and Microstructure of

Potential gradient significantly improved sensitivity; when CeO2 addition of more than O. O6% (mole fraction), the varistor voltage gradient decreased; (2) CeO2 added to the pressure-sensitive valve film of zinc oxide, Ce mainly in the form of CeO2 independent existence of the original phase, pinning in the grain boundary and hinder grain boundary movement , resulting in ZnO grain growth during the sintering process slowed down, thus reducing the grain size; (3) CeO2 added to the pressure-sensitive valve zinc oxide film,[link widoczny dla zalogowanych], so that the concentration of free electrons in ZnO crystals increased,[link widoczny dla zalogowanych], thereby enabling the interstitial the total concentration of zinc ions Zni down, the mass transfer of interstitial zinc ions reduced ability to inhibit the growth of ZnO grains, and thus the grain size decreased with the addition of CeO2. References: 【1】 Yan Youliang. 【J】. Porcelain arrester, 1981, (2) :49-53. 【2】 Xu Yuchun, Li Huifeng, Wang Qiong, et al. [J】. Functional Materials, 1996,27 (2) :126-130. 【3】 Li Shengtao. [J】. Electromagnetic arrester, 1998, (3) :42-48. 【4】 Wang Lanyi. [J】. Electromagnetic arrester, 1999, (3) :27-32. 【5】 Evaporating Cloud, Xie Heng pad. Zinc oxide varistor ceramics and its application in power system [M】. Beijing: Hydraulic Power Press, 1993. 【6】 Lisheng Tao,[link widoczny dla zalogowanych], Liu Fu Yi, Xu Chuan-Xiang. [J】. Functional Materials,[link widoczny dla zalogowanych], 1996,[link widoczny dla zalogowanych],27 (1): 55.60. StudyonvoltageandmicrostructureofZnOvaristordopedwithCeO2YANQun, FENGQing-fen, HUANGQing, SUHua3, XIEXian-jiao, TUMingling (1.CollegeofMaterialScienceandEngineering, SichuanUniversity, Chengdu610065, China; 2.ChengduAssociationforScienceandTechnology, Chengdu610015, China; 3.ChengduKLTCarbideCo.Ltd., Chengdu618306, China) Abstract: CeO2wasusedasanadditiveintroducedtoZnOceramics. TheeffectofCeO2onvoltageandmicrostructureofZnOvaristorwasstudiedbyusingelectricalpropertymeasurementsandSEM. Themechanismoftheeffectwassuggestedbasedontheoreticalanalysis. TheresultsshowthatthevoltageofZnOvaristorincreaseswiththecontentofCeO2intherangeof0-0.06mo1%. ButwhenthecontentofCeO2ismorethan0.06mo1%, thevoltageofZnOvaristordecreaseswiththecontentincrease. ThemicrostructureanalysisindicatesthattheminimaladditiveliesontheboundaryofZnOgraininformoftheindependentphase, anditdecreasestheconcentrationofinterstitialzinc [Zni], andthenreducesthesizeofZnOgrain, andasaresult, CeO2improvethevoltagecharacterofthevaristorgreatly. Keywords: ZnOvaristor; CeO2; varistorvoltage ~ microstructure

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